Semiconductor
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Doping
Another method to produce free carriers of electricity is to add impurities to, or to “dope,” the semiconductor. The difference in the number of valence electrons between the doping material, or dopant (either donors or acceptors of electrons), and host gives rise to negative (n-type) or positive (p-type) carriers of electricity. This concept is illustrated in the accompanying diagram of a doped silicon (Si) crystal. Each silicon atom has four valence electrons (represented by dots); two are required to form a covalent bond. In n- type silicon, atoms such as phosphorus (P) with five valence electrons replace some silicon and provide extra negative electrons. In p-type silicon, atoms with three valence electrons such as aluminum (Al) lead to a deficiency of electrons, or to holes, which act as positive electrons. The extra electrons or holes can conduct electricity.
Another method to produce free carriers of electricity is to add impurities to, or to “dope,” the semiconductor. The difference in the number of valence electrons between the doping material, or dopant (either donors or acceptors of electrons), and host gives rise to negative (n-type) or positive (p-type) carriers of electricity. This concept is illustrated in the accompanying diagram of a doped silicon (Si) crystal. Each silicon atom has four valence electrons (represented by dots); two are required to form a covalent bond. In n- type silicon, atoms such as phosphorus (P) with five valence electrons replace some silicon and provide extra negative electrons. In p-type silicon, atoms with three valence electrons such as aluminum (Al) lead to a deficiency of electrons, or to holes, which act as positive electrons. The extra electrons or holes can conduct electricity.
When p-type and n-type semiconductor regions are adjacent to each other, they form a semiconductor diode, and the region of contact is called a p-n junction. (A diode is a two-terminal device that has a high resistance to electric current in one direction but a low resistance in the other direction.) The conductance properties of the p-n junction depend on the direction of the voltage, which can, in turn, be used to control the electrical nature of the device. Series of such junctions are used to make transistors and other semiconductor devices such as solar cells, p-n junction lasers, rectifiers, and many others. See Electronics; Laser; Rectification; Solar Energy; Transistor.
Semiconductor devices have many varied applications in electrical engineering. Recent engineering developments have yielded small semiconductor chips containing hundreds of thousands of transistors. These chips have made possible great miniaturization of electronic devices. More efficient use of such chips has been developed through what is called complementary metal-oxide semiconductor circuitry, or CMOS, which consists of pairs of p- and n-channel transistors controlled by a single circuit. In addition, extremely small devices are being made using the technique of molecular-beam epitaxy.
See also Computer; Integrated Circuit; Microprocessor.
Semiconductor devices have many varied applications in electrical engineering. Recent engineering developments have yielded small semiconductor chips containing hundreds of thousands of transistors. These chips have made possible great miniaturization of electronic devices. More efficient use of such chips has been developed through what is called complementary metal-oxide semiconductor circuitry, or CMOS, which consists of pairs of p- and n-channel transistors controlled by a single circuit. In addition, extremely small devices are being made using the technique of molecular-beam epitaxy.
See also Computer; Integrated Circuit; Microprocessor.
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