Semiconductor
.. Doping Another method to produce free carriers of electricity is to add impurities to, or to “dope,” the semiconductor. The difference in the number of valence electrons between the doping material, or dopant (either donors or acceptors of electrons), and host gives rise to negative (n-type) or positive (p-type) carriers of electricity. This concept is illustrated in the accompanying diagram of a doped silicon (Si) crystal. Each silicon atom has four valence electrons (represented by dots); two are required to form a covalent bond. In n- type silicon, atoms such as phosphorus (P) with five valence electrons replace some silicon and provide extra negative electrons. In p-type silicon, atoms with three valence electrons such as aluminum (Al) lead to a deficiency of electrons, or to holes, which act as positive electrons. The extra electrons or holes can conduct electricity. When p-type and n-type semiconductor regions are adjacent to each other, they form a semiconductor diode, and t